Production Proven, Complex Semiconductor IP Cores

Semiconductor IP Cores

T2M Bluetooth Bluetooth Dual Mode v4.2 RF Transceiver IP

Bluetooth Dual Mode v4.2 RF Transceiver IP

Description and Features

This RF transceiver IP is the design data base of a Bluetooth Dual Mode RF Transceiver extracted from a 40nm production chip. It consists of a complete radio front-end integrating Basic Rate (BR), Enhanced Data Rate (EDR), Low Energy (LE) features fully compliant with the Bluetooth 4.2 specification. This RF is also co-existence proven and matured with WLAN and cellular. A special LPO for the high Sleep Clock Accuracy (SCA) is also integrated for the low power Bluetooth (BLE) applications.

  • TSMC40nm
  • High Volume Silicon Proven
  • Extracted from Design Data Base of production chip
  • Integrated balun
  • Single RF I/O for Rx and Tx
  • Full digital Tx direct-up modulation scheme
  • Spectral clean Tx
  • Max Output power
  • FSK +13 dBm (typical)
  • DPSK (2 and 3 Mb/s) +10 dBm
  • RX Sensitivity -92dB
  • Rx Sensitivity (dirty transmitter at IC: dirty transmitter at BER 0.1%)
  • FSK -91 dBm
  • DPSK 2Mb/s -91 dBm
  • DPSK 3Mb/s -85 dBm
  • Excellent low power consumption performance
  • Fully integrated LDO’s, DCD converter PMU system


  • Source Code Delivery with rights to modify
  • Schematics
  • Layout
  • Certification Certificates
  • Chip Test program
  • KGD